Dynamic stability and noise margins of SRAM arrays in nanoscaled technologies

SRAM stability is one of the primary bottlenecks of current VLSI system design, and the unequivocal supply voltage scaling limiter. Static noise margin metrics have long been the de-facto standard for measuring this stability and estimating the yield of SRAM arrays. However, in modern process technologies, under scaled supply voltages and increased process variations, these traditional metrics are no longer sufficient. Recent research has analyzed the dynamic behavior and stability of SRAM circuits, leading to dynamic stability metrics and dynamic noise margin definition. This paper provides a brief overview of the limitations of static noise margin metrics and the resulting dynamic stability and noise margin concepts that have been proposed to overcome them

A Fast Modular Method for True Variation-Aware Separatrix Tracing in Nanoscaled SRAMs

As memory density continues to grow in modern systems, accurate analysis of SRAM stability is increasingly important to ensure high yields. Traditional static noise margin metrics fail to capture the dynamic characteristics of SRAM behavior, leading to expensive over-design and disastrous under-design. One of the central components of more accurate dynamic stability analysis is the separatrix; however, its straightforward extraction is extremely time-consuming, and efficient methods are either non-accurate or extremely difficult to implement. In this paper, we propose a novel algorithm for fast separatrix tracing of any given SRAM topology, designed with industry standard transistor models in nano-scaled technologies. The proposed algorithm is applied to both standard 6T SRAM bitcells, as well as previously proposed alternative sub-threshold bitcells, providing up to three orders-of-magnitude speedup, as compared to brute force methods. In addition, for the first time, statistical Monte Carlo separatrix distributions are plotted

Single event upset mitigation in low power SRAM design

Logic compatible gain cell (GC)-embedded DRAM (eDRAM) arrays are considered an alternative to SRAM due to their small size, nonratioed operation, low static leakage, and two-port functionality. However, traditional GC-eDRAM implementations require boosted control signals in order to write full voltage levels to the cell to reduce the refresh rate and shorten access times. These boosted levels require either an extra power supply or on-chip charge pumps, as well as nontrivial level shifting and toleration of high voltage levels. In this brief, we present a novel, logic compatible, 3T GC-eDRAM bitcell that operates with a single-supply voltage and provides superior write capability to the conventional GC structures. The proposed circuit is demonstrated with a 2-kb memory macro that was designed and fabricated in a mature 0.18-μm CMOS process, targeted at low-power, energy-efficient applications. The test array is powered with a single supply of 900 mV, showing a 0.8-ms worst case retention time, a 1.3-ns write-access time, and a 2.4-pW/bit retention power. The proposed topology provides a bitcell area reduction of 43%, as compared with a redrawn 6-transistor SRAM in the same technology, and an overall macro area reduction of 67% including peripherals

An Overlap-Contention Free True-Single-Phase Clock Dual-Edge-Triggered Flip-Flop

Dual-edge-triggered (DET) synchronous operation is a very attractive option for low-power, high-performance designs. Compared to conventional single-edge synchronous systems, DET operation is capable of providing the same throughput at half the clock frequency. This can lead to significant power savings on the clock network that is often one of the major contributors to total system power. However, in order to implement DET operation, special registers need to be introduced that sample data on both clock-edges. These registers are more complex than their single-edge counterparts, and often suffer from a certain amount of clock-overlap between the main clock and the internally generated inverted clock. This overlap can cause contention inside the cell and lead to logic failures, especially when operating at scaled power supplies and under process variations that characterize nanometer technologies. This paper presents a novel, static DET flip-flop (DET-FF) with a true-single-phase clock that completely avoids clock overlap hazards by eliminating the need for an inverted clock edge for functionality. The proposed DET FF was implemented in a standard 40nm CMOS technology, showing full functionality at low-voltage operating points, where conventional DET-FFs fail. Under a near-threshold, 500mV supply voltage, the proposed cell also provides a 35% lower CK-to-Q delay and the lowest power-delay-product compared to all considered DET-FF implementations. © 2015 IEEE

Replica Technique for Adaptive Refresh Timing of Gain-Cell-Embedded DRAM

Gain cells have recently been shown to be a viable alternative to static random access memory in low-power applications due to their low leakage currents and high density. The primary component of power consumption in these arrays is the dynamic power consumed during periodic refresh operations. Refresh timing is traditionally set according to a worst-case evaluation of retention time under extreme process variations, and worst-case access statistics, leading to frequent power-hungry refresh cycles. In this brief we present a replica technique for automatically tracking the retention time of a gain-cell-embedded dynamic-random-access-memory macrocell according to process variations and operating statistics, thereby reducing the data retention power of the array. A 2-kb array was designed and fabricated in a mature 0.18-mu m CMOS process, appropriate for integration in ultralow power applications, such as biomedical sensors. Measurements show efficient retention time tracking across a range of supply voltages and access statistics, lowering the refresh frequency by more than 5x, as compared with traditional worst-case design

4T Gain-Cell with internal-feedback for ultra-low retention power at scaled CMOS nodes

Gain-Cell embedded DRAM (GC-eDRAM) has recently been recognized as a possible alternative to traditional SRAM. While GC-eDRAM inherently provides high-density, low-leakage, low-voltage, and 2-ported operation, its limited retention time requires periodic, power-hungry refresh cycles. This drawback is further enhanced at scaled technologies, where increased subthreshold leakage currents and decreased in-cell storage capacitances result in faster data deterioration. In this paper, we present a novel 4T GC-eDRAM bitcell that utilizes an internal feedback mechanism to significantly increase the data retention time in scaled CMOS technologies. A 2 kb memory macro was implemented in a low-power 65nm CMOS technology, displaying an over 3× improvement in retention time over the best previous publication at this node. The resulting array displays a nearly 5× reduction in retention power (despite the refresh power component) with a 40% reduction in bitcell area, as compared to a standard 6T SRAM

Review and Classification of Gain Cell eDRAM Implementations

With the increasing requirement of a high-density, high-performance, low power alternative to traditional SRAM, Gain Cell (GC) embedded DRAMs have gained a renewed interest in recent years. Several industrial and academic publications have presented GC memory implementations for various target applications, including high-performance processor caches, wireless communication memories, and biomedical system storage. In this paper, we review and compare the recent publications, examining the design requirements and the implementation techniques that lead to achievement of the required design metrics of these applications

A Timing-Monitoring Sequential for Forward and Backward Error-Detection in 28 nm FD-SOI

The increasing impact of variability on near-threshold nanometer circuits calls for a tighter online monitoring and control of the available timing margins. Error-detection sequentials are widely used together with error-correction techniques to operate digital designs with such carefully controlled far-below-worst-case margins, ensuring their correct operation even in the presence of uncertainties and variations. However, these registers are often designed only to either detect setup timing violations or to measure the available positive timing slack for a small detection-window. In this paper we propose a timing-monitoring sequential that provides both timing-monitoring modes, which can be selected at run-time depending on the desired timing-monitoring strategy. As the detection window of the presented circuit depends on the duty-cycle of the clock, either slow paths or fast paths can be monitored and measured with wide timing windows. The performance of this timing-monitoring sequential is evaluated in a 28nm FD-SOI process with post-layout simulations which show that the circuit is able to monitor a positive timing slack as small as 140 ps or to measure a path delay as fast as 50 ps. The proposed circuit is applied to a digital multiplier that was fabricated in a test chip and measurements show that the timing-monitoring sequentials are able to measure the critical path of the multiplier with a 1% accuracy and without incurring any timing violation

Exploration of Sub-VT and Near-VT 2T Gain-Cell Memories for Ultra-Low Power Applications under Technology Scaling

Ultra-low power applications often require several kb of embedded memory and are typically operated at the lowest possible operating voltage (VDD) to minimize both dynamic and static power consumption. Embedded memories can easily dominate the overall silicon area of these systems, and their leakage currents often dominate the total power consumption. Gain-cell based embedded DRAM arrays provide a high-density, low-leakage alternative to SRAM for such systems; however, they are typically designed for operation at nominal or only slightly scaled supply voltages. This paper presents a gain-cell array which, for the first time, targets aggressively scaled supply voltages, down into the subthreshold (sub-VT) domain. Minimum VDD design of gain-cell arrays is evaluated in light of technology scaling, considering both a mature 0.18 μm CMOS node, as well as a scaled 40 nm node. We first analyze the trade-offs that characterize the bitcell design in both nodes, arriving at a best-practice design methodology for both mature and scaled technologies. Following this analysis, we propose full gain-cell arrays for each of the nodes, operated at a minimum VDD. We find that an 0.18 μm gain-cell array can be robustly operated at a sub-VT supply voltage of 400mV, providing read/write availability over 99% of the time, despite refresh cycles. This is demonstrated on a 2 kb array, operated at 1 MHz, exhibiting full functionality under parametric variations. As opposed to sub-VT operation at the mature node, we find that the scaled 40 nm node requires a near-threshold 600mV supply to achieve at least 97% read/write availability due to higher leakage currents that limit the bitcell’s retention time. Monte Carlo simulations show that a 600mV 2 kb 40 nm gain-cell array is fully functional at frequencies higher than 50 MHz